1 semiconductor group spp30n03l sipmos power transistor product summary drain source voltage 30 v ds v drain-source on-state resistance w 0.018 r ds(on) i d continuous drain current 30 a features n channel enhancement mode avalanche rated logic level d v /d t rated 175c operating temperature pin 1 pin 2 pin 3 g d s packaging type package ordering code spp30n03l tube p-to220-3-1 q67040-s4737-a2 SPB30N03L tape and reel q67040-s4143-a3 p-to263-3-2 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol unit value continuous drain current t c = 25 c, 1) t c = 100 c 30 28 i d a pulsed drain current t c = 25 c i dpulse 120 avalanche energy, single pulse i d = 30 a, v dd = 25 v, r gs = 25 w mj e as 145 avalanche energy, periodic limited by t j max 7.5 e ar reverse diode d v /d t i s = 30 a, v ds = 24 v, d i /d t = 200 a/s, t jmax = 175 c d v /d t 6 kv/s gate source voltage v gs 14 v power dissipation t c = 25 c p tot 75 w operating and storage temperature t j , t st g c -55... +175 55/175/56 iec climatic category; din iec 68-1
2 semiconductor group spp30n03l thermal characteristics parameter values symbol unit typ. max. min. characteristics r thjc - - 2 k/w thermal resistance, junction - case - thermal resistance, junction - ambient r thja - 62 - - - - 62 40 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol unit values min. max. typ. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 c - v (br)dss 30 - v gate threshold voltage, v gs = v ds i d = 50 a v gs(th) 2 1.6 1.2 zero gate voltage drain current v ds = 30 v, v gs = 0 v, t j = 25 c v ds = 30 v, v gs = 0 v, t j = 150 c - i dss a 100 - gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 na 100 drain-source on-state resistance v gs = 4.5 v, i d = 28 a v gs = 10 v, i d = 28 a r ds(on) - - 0.023 0.013 0.028 0.018 w 1 current limited by bond wire 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
3 semiconductor group spp30n03l electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 30 a g fs 10 30 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 970 1220 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 390 500 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 170 215 turn-on delay time v dd = 15 v, v gs = 4.5 v, i d = 30 a, r g = 6.2 w t d(on) - 13 20 ns rise time v dd = 15 v, v gs = 4.5 v, i d = 30 a, r g = 6.2 w t r - 33 50 turn-off delay time v dd = 15 v, v gs = 4.5 v, i d = 30 a, r g = 6.2 w t d(off) - 12 18 fall time v dd = 15 v, v gs = 4.5 v, i d = 30 a, r g = 6.2 w t f - 22 33
4 semiconductor group spp30n03l electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics gate to source charge v dd = 24 v, i d = 30 a 4.5 nc 3 q gs - - 13 q gd gate to drain charge v dd = 24 v, i d = 30 a 20 gate charge total v dd = 24 v, i d = 30 a, v gs = 0 to 10 v - 32 48 q g gate plateau voltage v dd = 24 v, i d = 30 a v (plateau) 3.9 - v - reverse diode inverse diode continuous forward current t c = 25 c i s - - 30 a inverse diode direct current,pulsed t c = 25 c i sm - - 120 inverse diode forward voltage v gs = 0 v, i f = 56 a v sd - 1.1 v 1.7 reverse recovery time v r = 15 v, i f = i s , d i f /d t = 100 a/s t rr - 32 ns 50 reverse recovery charge v r = 15 v, i f = l s , d i f /d t = 100 a/s q rr - c 0.024 0.036
5 semiconductor group spp30n03l power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 w 80 spp30n03l p tot drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 spp30n03l i d transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp30n03l z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spp30n03l i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 26.0 s
6 semiconductor group spp30n03l typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 a 75 spp30n03l i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 75 w l 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 a 55 i d 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 w 0.10 spp30n03l r ds(on) v gs [v] = c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on) max 1 2 3 v 5 v gs 0 10 20 30 40 50 a 70 i d typ. forward transconductance g fs = f ( i d ) ; t j = 25c parameter: g fs 0 5 10 15 20 25 a 35 i d 0 5 10 15 20 s 30 g fs
7 semiconductor group spp30n03l drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 28 a, v gs = 4.5 v -60 -20 20 60 100 140 c 200 t j 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 w 0.070 spp30n03l r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 50 a -60 -20 20 60 100 140 c 200 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v 3.0 v gs(th) min typ max typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 4 8 12 16 20 24 28 v 36 v ds 2 10 3 10 4 10 pf c ciss coss crss forward characteristics of reverse diode i f = f ( v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a spp30n03l i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
8 semiconductor group spp30n03l typ. gate charge v gs = f ( q gate ) parameter: i d puls = 30 a 0 5 10 15 20 25 30 35 40 nc 50 q gate 0 2 4 6 8 10 12 v 16 spp30n03l v gs ds max v 0,8 ds max v 0,2 avalanche energy e as = f ( t j ) parameter: i d = 30 a, v dd = 25 v r gs = 25 w 20 40 60 80 100 120 140 c 180 t j 0 25 50 75 100 mj 150 e as drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 35 v 37 spp30n03l v (br)dss
9 semiconductor group spp30n03l edition 02 / 1999 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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